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insulated gate bipolar transistor 02/22/11 features low vce (on) non punch through igbt technology. 10s short circuit capability. square rbsoa. positive vce (on) temperature coefficient. lead-free www.irf.com 1 benefits benchmark efficiency for motor control. rugged transient performance. low emi. excellent current sharing in parallel operation. IRGS15B60Kpbf v ces = 600v i c = 15a, t c =100c t sc > 10s, t j =150c v ce(on) typ. = 1.8v d 2 pak IRGS15B60Kpbf e c g n-channel absolute maximum ratings parameter max. units v ces collector-to-emitter voltage 600 v i c @ t c = 25c continuous collector current 31 i c @ t c = 100c continuous collector current 15 i cm pulse collector current vge = 15v 62 i lm clamped inductive load current vge = 20v 62 v ge continuous gate-to-emitter voltage 20 v p d @ t c = 25c maximum power dissipation 208 p d @ t c = 100c maximum power dissipation 83 t j operating junction and -55 to +150 t stg storage temperature range c soldering temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) thermal resistance parameter min. typ. max. units r jc (igbt) junction-to-case-igbt CCC CCC 0.6 r cs case-to-sink (flat, greased surface) CCC 0.5 CCC r ja junction-to-ambient (pcb mount steady state) CCC CCC 40 weight CCC 1.44 CCC g (oz) a w c/w downloaded from: http:///
IRGS15B60Kpbf 2 www.irf.com note to are on page 11 electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions ref.fig v (br)ces collector-to-emitter breakdown voltage 600 v v ge = 0v, i c = 500 a ? v (br)ces / ? t j temperature coeff. of breakdown voltage 0.3 v/c v ge = 0v, i c = 1.0ma (25c-150c) 1.5 1.8 2.2 i c = 15a, v ge = 15v, t j = 25c 5,6,7 v ce(on) collector-to-emitter saturation voltage 2.05 2.5 v i c = 15a, v ge = 15v, t j = 125c 8,9,10 2 . 12 . 6 i c = 15a, v ge = 15v, t j = 150c v ge(th) gate threshold voltage 3.5 4.5 5.5 v v ce = v ge , i c = 250 a 8,9 ? v ge(th) / ? tj threshold voltage temp. coefficient -10 mv/c v ce = v ge , i c =1.0ma (25c - 150c) 10,11 gfe forward transconductance 10.6 s v ce = 50v, i c = 20a, pw = 80s i ces collector-to-emitter leakage current 5.0 150 v ge = 0v, v ce = 600v, t j = 25c 500 1000 v ge = 0v, v ce = 600v, t j = 150c i ges gate-to-emitter leakage current 100 na v ge = 20v switching characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units ref.fig q g total gate charge (turn-on) 56 84 i c = 15a q ge gate-to-emitter charge (turn-on) 7.0 10 nc v ge = 15v ct1 q gc gate-to-collector charge (turn-on) 26 39 v cc = 400v e on turn-on switching loss 220 330 i c = 15a, v cc = 400v, v ge = 15v ct4 e off turn-off switching loss 340 455 j r g = 22 ? , l = 200h e total total switching loss 560 785 l s = 150nh t j = 25c t d(on) turn-on delay time 34 44 i c = 15a, v cc = 400v, v ge = 15v ct4 t r rise time 16 22 ns r g = 22 ? , l = 200h t d(off) turn-off delay time 184 200 l s = 150nh t j = 25c t f fall time 20 26 e on turn-on switching loss 355 470 i c = 15a, v cc = 400v, v ge = 15v ct4 e off turn-off switching loss 490 600 j r g = 22 ? , l = 200h 12,14 e total total switching loss 835 1070 l s = 150nh t j = 150c wf1, wf2 t d(on) turn-on delay time 34 44 i c = 15a, v cc = 400v, v ge = 15v 13, 15 t r rise time 18 25 ns r g = 22 ? , l = 200h ct4 t d(off) turn-off delay time 203 226 l s = 150nh t j = 150c wf1 t f fall time 28 36 wf2 c ies input capacitance 850 v ge = 0v c oes output capacitance 75 v cc = 30v c res reverse transfer capacitance 35 f = 1.0mhz i c = 62a 4 rbsoa reverse bias safe operating area full square v cc = 500v, vp =600v ct2 rg = 22 ? , v ge = +20v to 0v, t j =150c scsoa short circuit safe operating area v cc = 360v, vp =600v ,t j = 150c ct3 rg = 22 ? , v ge = +15v to 0v wf3 10 conditions a pf s downloaded from: http:///
IRGS15B60Kpbf www.irf.com 3 fig. 1 - maximum dc collector current vs. case temperature fig. 2 - power dissipation vs. case temperature fig. 3 - forward soa t c = 25c; t j 150c fig. 4 - reverse bias soa t j = 150c; v ge =15v 0 20 40 60 80 100 120 140 160 t c ( c) 0 5 10 15 20 25 30 35 i c ( a ) 1 10 100 1000 10000 v ce (v ) 0.1 1 10 100 i c ( a ) 10 s 100 s 1ms dc 10 100 1000 v ce (v) 0 1 10 100 i c a ) 0 20 40 60 80 100 120 140 160 t c (c) 0 40 80 120 160 200 240 p t o t ( w ) downloaded from: http:///
IRGS15B60Kpbf 4 www.irf.com fig. 6 - typ. igbt output characteristics t j = 25c; tp = 300s fig. 5 - typ. igbt output characteristics t j = -40c; tp = 300s fig. 7 - typ. igbt output characteristics t j = 150c; tp = 300s fig. 8 - typical v ce vs. v ge t j = -40c 0123456 v ce (v) 0 10 20 30 40 50 60 70 80 90 100 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v 0123456 v ce (v) 0 10 20 30 40 50 60 70 80 90 100 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v 4 6 8 101214161820 v ge (v) 0 2 4 6 8 10 12 14 16 18 20 v c e ( v ) i ce = 5.0a i ce = 15a i ce = 30a 0123456 v ce (v) 0 10 20 30 40 50 60 70 80 90 100 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v downloaded from: http:///
IRGS15B60Kpbf www.irf.com 5 fig. 9 - typical v ce vs. v ge t j = 25c fig. 10 - typical v ce vs. v ge t j = 150c fig. 11 - typ. transfer characteristics v ce = 50v; tp = 10s 4 6 8 101214161820 v ge (v ) 0 2 4 6 8 10 12 14 16 18 20 v c e ( v ) i ce = 5.0a i ce = 15a i ce = 30a 0 5 10 15 20 v ge (v ) 0 20 40 60 80 100 120 140 160 i c e ( a ) t j = 25c t j = 150c t j = 150c t j = 25c 4 6 8 101214161820 v ge (v) 0 2 4 6 8 10 12 14 16 18 20 v c e ( v ) i ce = 5.0a i ce = 15a i ce = 30a downloaded from: http:///
IRGS15B60Kpbf 6 www.irf.com fig. 13 - typ. switching time vs. i c t j = 150c; l=200h; v ce = 400v r g = 22 ? ; v ge = 15v fig. 15 - typ. switching time vs. r g t j = 150c; l=200h; v ce = 600v i ce = 15a; v ge = 15v fig. 14 - typ. energy loss vs. r g t j = 150c; l=200h; v ce = 400v i ce = 15a; v ge = 15v 0 10 20 30 40 50 i c (a ) 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on 0 50 100 150 r g ( ? ) 0 100 200 300 400 500 600 700 800 900 e n e r g y ( j ) e on e off 0 50 100 150 r g ( ? ) 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on fig. 12 - typ. energy loss vs. i c t j = 150c; l=200h; v ce = 400v r g = 22 ? ; v ge = 15v 0 1 02 03 04 05 0 i c (a) 0 200 400 600 800 1000 1200 1400 1600 1800 e n e r g y ( j ) e off e on downloaded from: http:///
IRGS15B60Kpbf www.irf.com 7 fig. 17 - typical gate charge vs. v ge i ce = 15a; l = 600h fig. 16 - typ. capacitance vs. v ce v ge = 0v; f = 1mhz 0 20 40 60 80 100 v ce (v ) 10 100 1000 10000 c a p a c i t a n c e ( p f ) cies coes cres 0 2 04 06 0 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 16 v g e ( v ) 300v 400v fig 18. maximum transient thermal impedance, junction-to-case (igbt) 1e-6 1e-5 1e-4 1e-3 1e-2 1e-1 1e+ 0 t 1 , rectangular pulse duration (sec) 0. 001 0. 01 0. 1 1 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ri (c/w) i (sec) 0.231 0.0001570.175 0.000849 0.201 0.011943 j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 c ci i / ri ci= i / ri downloaded from: http:///
IRGS15B60Kpbf 8 www.irf.com fig.c.t.1 - gate charge circuit (turn-off) fig.c.t.2 - rbsoa circuit 1k vcc dut 0 l fig.c.t.3 - s.c.soa circuit fig.c.t.4 - switching loss circuit fig.c.t.5 - resistive load circuit l rg vcc diode clamp / dut dut / driver - 5v rg vcc dut r = v cc i cm l rg 80 v dut 480v + - dc driver dut 360v downloaded from: http:///
IRGS15B60Kpbf www.irf.com 9 wf.3- typ. short circuit @ t j = 150c using ct.3 wf.1- typ. turn-off loss @ t j = 150c using ct.4 wf.2- typ. turn-on loss @ t j = 150c using fig. ct.4 -1 00 0 100 200 300 400 500 600 -0.5 0.0 0.5 1.0 1.5 t (s) v ce (v) -5 0 5 10 15 20 25 30 i ce (a) e o ff l o s s 5% v ce 5% i ce 90% i ce t f -100 0 100 200 300 400 500 -0.2 -0.1 0.0 0.1 t (s) v ce (v) -10 0 10 20 30 40 50 i ce (a) t r eon loss 10% test current test current 5% v ce 90% test current -100 0 100 200 300 400 500 -10 0 10 20 30 t ( s ) v ce (v) -50 0 50 100 150 200 250 i ce (a) v ce i ce downloaded from: http:///
IRGS15B60Kpbf 10 www.irf.com

dat e code ye ar 0 = 2000 we e k 02 a = assembly site code rectifier international part number p = designates lead - f ree product (optional) f530s in t he as s e mbly l ine "l" as sembled on ww 02, 2000 this is an irf530s wit h lot code 8024 int ernat ional logo rect if ier lot code as s e mb l y year 0 = 2000 part number dat e code line l we e k 0 2 or f530s logo as s e mb l y lot code downloaded from: http:///
IRGS15B60Kpbf www.irf.com 11 ir world headquarters: 101 n. sepulveda blvd, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 02/2011 data and specifications subject to change without notice. this product has been designed and qualified for industrial market. qualification standards can be found on irs web site. notes: this is applied to d 2 pak, when mounted on 1" square pcb ( fr-4 or g-10 material ). for recommended footprint and soldering techniques refer to application note #an-994. energy losses include "tail" and diode reverse recovery, using diode hf15d060ace. v cc = 80% (v ces ), v ge = 20v, l = 100h, r g = 22 ?.

dimensions are shown in millimeters (inches) 3 4 4 trr feed direction 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) trl feed direction 10.90 (.429) 10.70 (.421) 16.10 (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 4.72 (.136) 4.52 (.178) 24.30 (.957) 23.90 (.941) 0.368 (.0145) 0.342 (.0135) 1.60 (.063) 1.50 (.059) 13.50 (.532) 12.80 (.504) 330.00 (14.173) max. 27.40 (1.079) 23.90 (.941) 60.00 (2.362) min. 30.40 (1.197) max. 26.40 (1.039) 24.40 (.961) notes : 1. comforms to eia-418. 2. controlling dimension: millimeter. 3. dimension measured @ hub. 4. includes flange distortion @ outer edge. downloaded from: http:///

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